Method of manufacturing semiconductor device

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S311000, C430S312000, C430S313000

Reexamination Certificate

active

07438998

ABSTRACT:
In a method of manufacturing a semiconductor device including a wiring pattern in the form of a linear line having an intermediate portion with a locally different line width, the wiring pattern being formed by using a resist pattern, the resist pattern is formed through an exposure step using a mask pattern prepared by dividing the wiring pattern in a mask into a simple line portion and a rectangular pattern portion having a different line width, and interposing between the line portion and the rectangular pattern portion a slit having a predetermined separation width of not larger than 0.22×λ/NA (λ represents a wavelength of exposure light, and NA represents a numerical aperture of a projection lens).

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patent: 2000-47366 (2000-02-01), None

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