Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1988-02-23

1990-03-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437238, 437187, 357 34, H01L 21283

Patent

active

049101706

ABSTRACT:
In the invention, the width of the emitter contact layer is determined in accordance with the width of a first side wall, and the junction distance between a base contact layer and the emitter contact layer is determined in accordance with the width of a second side wall. The junction distance between the emitter contact layer and the base contact layer can be decreased, no extra high-temperature annealing such as thermal oxidation is needed, and the diffusion profile can be controlled to be shallow.

REFERENCES:
patent: 4689869 (1987-09-01), Jambatkar
patent: 4696097 (1987-09-01), McLaughlin
patent: 4798928 (1988-07-01), Goth et al.
patent: 4799990 (1989-01-01), Kerbaugh
Japanese Patent Disclosure (Kokai) No. 61-102752, Itoh (transliterated) May 21, 1986.

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