Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-05-31
2008-09-02
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000
Reexamination Certificate
active
07419837
ABSTRACT:
A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film (25). Heat treatment is not performed between patterning of the top electrode film (26) and formation of the PLZT film (27). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film (25) and the Pt film (24).
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Notification of Transmittal of Copies of Translation of the International Preliminary Report on Patentability (Form PCT/IB/338) of International Application No. PCT/JP2004/001912 mailed Sep. 28, 2006 with Forms PCT/IB/373 and PCT/ISA/237.
Fujitsu Limited
Nguyen Tuan H
Westerman, Hattori, Daniels & Adrian , LLP.
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