Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Patent
1997-10-28
1999-10-26
Niebling, John F.
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
438268, 438279, H01L 21352, H01L 21336
Patent
active
059727411
ABSTRACT:
A first conductivity layer and a first insulating film are successively formed on a channel layer, and a photoresist film is formed on the first insulating film. The photoresist film is selectively exposed to light using a photomask and patterned. Using the patterned photoresist film as a mask, the first insulating film and the first conductivity layer are etched to form source electrodes from the first conductivity layer. Using the first insulating film and the source electrodes as a mask, an impurity of one conductivity type is diffused into exposed portions of the channel layer to form source regions. A second insulating film is formed in covering relation to side walls and upper surfaces of the source electrodes. Using the second insulating film as a mask, the channel layer and the common drain layer are etched to form trenches in the source regions, the channel layer, and the common drain layer. A third insulating film is formed on surfaces of the trenches, and a second conductive layer is formed as a gate electrode on the entire surface so as to fill up the trenches and cover the second insulating film.
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Kitagawa Masanao
Kubo Hirotoshi
Kuwako Eiichiroh
Odajima Keita
Onda Masahito
Lebentritt Michael S.
Niebling John F.
Sanyo Electric Co,. Ltd.
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