Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-11-20

2007-11-20

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S133000, C438S680000, C438S683000, C257SE21170, C257SE21304, C257SE21663, C257SE21664

Reexamination Certificate

active

11106580

ABSTRACT:
A W plug (24) is formed and a W oxidation preventing barrier metal film (25) is formed thereon. After that, an SiON film (27) thinner than the W oxidation preventing barrier metal film (25) is formed and Ar sputter etching is performed on the SiON film (27). As a result, the shape of the surface of the SiON film (27) becomes gentler and deep trenches disappear. Next, an SiON film (28) is formed on the whole surface. A voidless W oxidation preventing insulating film (29) is composed of the SiON (28) film and the SiON film (27).

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