Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-12-14

1995-08-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437164, 437918, 148DIG150, H01L 21329, H01L 21225

Patent

active

054380146

ABSTRACT:
A polycrystalline silicon film pattern 3 having a thickness of below 120 nm is formed on a silicon oxide film 2 provided on the principal surface of a silicon substrate 1. The polycrystalline silicon film pattern 3 is covered with a boron silicate glass film 4. By heat treatment, boron is diffused from the boron silicate glass film 4 to the polycrystalline silicon film pattern 3 to form a polycrystalline silicon resistance element 5 containing boron at a density of above 1.times.10.sup.19 atoms/cm.sup.3. As a result, the temperature coefficient of the resistance element 5 comprising the polycrystalline film can be reduced.

REFERENCES:
patent: 4489104 (1984-12-01), Lee
patent: 4502894 (1985-03-01), Seto et al.
patent: 4954454 (1990-09-01), Kobushi et al.
patent: 5028564 (1991-07-01), Chang et al.
patent: 5185285 (1993-02-01), Hasaka
H 546; Schnable et al; U.S. Statutory Invention Registration; Nov. 1, 1988.

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