Method of manufacturing semiconductor device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S874000, C029S885000, C257S738000, C438S613000

Reexamination Certificate

active

11446731

ABSTRACT:
A method of manufacturing a semiconductor device includes (a) forming a first resin layer on a semiconductor substrate including an electrode pad and a passivation film, (b) curing the first resin layer, (c) forming a second resin layer which slopes more gently than the cured first resin layer on at least a lower portion of the first resin layer, (d) curing the second resin layer to form a resin protrusion including the first and second resin layers, and (e) forming a conductive layer which is electrically connected with the electrode pad and passes over the resin protrusion.

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patent: 2005-353983 (2005-12-01), None

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