Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S108000, C438S111000, C438S113000, C438S123000, C257S666000, C257S778000

Reexamination Certificate

active

06995038

ABSTRACT:
A method of manufacturing a semiconductor device includes preparing a semiconductor wafer including a first main surface having a semiconductor device forming region and a peripheral region, and a second main surface; preparing first and second dies defining a cavity; holding the semiconductor wafer by the first die so that the first main surface is exposed; placing a film member on the second die; supplying a predetermined amount of resin to a predetermined region on a resin layout region of the film member; heating the first die and the second die; bringing the first die and the second die into contact with each other through the film member to form the cavity, thereby the first main surface and the resin are placed in the cavity; and pressure-reducing the interior of the cavity and reducing the capacity of the cavity to cause the molten resin obtained by melting the resin to contact the first main surface, thereby forming an encapsulating portion on the first main surface.

REFERENCES:
patent: 6344162 (2002-02-01), Miyajima
patent: 2002/0110956 (2002-08-01), Kumamoto et al.
patent: 2000-260796 (2000-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3642065

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.