Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-05-23
2006-05-23
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
C438S745000, C438S746000, C430S331000
Reexamination Certificate
active
07049235
ABSTRACT:
A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist polymer remover composition that includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.
REFERENCES:
patent: 6029679 (2000-02-01), Ota et al.
patent: 6043005 (2000-03-01), Haq
patent: 2004/0202969 (2004-10-01), Park et al.
patent: 0939344 (1999-09-01), None
patent: 0788143 (2000-09-01), None
patent: WO-97/36209 (1997-10-01), None
Fujimura et al., “Ashing of the Ion Implanted Resist Layer,” Digest of Papers 1989 2ndMicroProcess Conference, Jul. 2-5, 1989.
Search Report from German Patent and Trademark Office Dated Nov. 17, 2004.
Lee Chang Hwan
Park Seong Hwan
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Nguyen Thanh
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3561763