Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-05-23

2006-05-23

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S745000, C438S746000, C430S331000

Reexamination Certificate

active

07049235

ABSTRACT:
A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist polymer remover composition that includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.

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Fujimura et al., “Ashing of the Ion Implanted Resist Layer,” Digest of Papers 1989 2ndMicroProcess Conference, Jul. 2-5, 1989.
Search Report from German Patent and Trademark Office Dated Nov. 17, 2004.

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