Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-07-04
2006-07-04
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C438S256000, C438S686000
Reexamination Certificate
active
07071071
ABSTRACT:
A lower electrode of a capacitor element is formed by manufacturing a crown structure while using a first conducting material such as titanium nitride or the like excellent in mechanical strength as a base material and by forming a film of a second conducting material such as ruthenium or the like, which is comparatively difficult to be oxidized, on a surface of the crown structure. First, ruthenium is deposited on a surface of the crown structure by using a sputtering method. Thereafter, the ruthenium (sputtered ruthenium) placed in a peripheral region of the crown structure is removed by etching, and a film of ruthenium is further formed on a surface of the crown structure by using a CVD method while using the sputtered ruthenium as a seed layer.
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Iijima Shinpei
Kuroki Keiji
Elpida Memory Inc.
Garcia Joannie Adelle
Young & Thompson
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