Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-03-28
2006-03-28
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S706000, C438S745000
Reexamination Certificate
active
07018926
ABSTRACT:
A method of manufacturing a semiconductor device includes a providing step and a polishing step. In the providing step, a semiconductor wafer is provided. The semiconductor wafer has a plane area including a plane surface and a peripheral area surrounding the plane area. The peripheral area has a hemispherical surface extending from the plane surface to a wafer end. The distance from an end of the plane surface to the wafer end is about 800–1000 μm. In the polishing step, mechanically and chemically polishing is conducted using a polishing pad with a polishing slurry.
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Takafumi et al., Semiconductor Wafer with Step and Curved Surface in End Part and Its Working Method, Computer Generate English translation of JP 2001-338852, 8 pages.
Norton Nadine G.
Oki Electric Industry Co. Ltd.
Rabin & Berdo PC
Umez-Eronini Lynette T.
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