Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1995-09-06

1997-04-29

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 76, 216 75, 1566431, 438722, H01L 21302

Patent

active

056245831

ABSTRACT:
A method of manufacturing a semiconductor device containing a ruthenium oxide includes the step of dry-etching the ruthenium oxide using a gas mixture containing oxygen or ozone gas and at least one material selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, a halogen gas containing at least one of the fluorine, chlorine, bromine, and iodine gases, and a hydrogen halide.

REFERENCES:
patent: 5236550 (1993-08-01), Abt et al.
patent: 5254217 (1993-10-01), Maniar et al.
patent: 5382320 (1995-01-01), Desu et al.
patent: 5407855 (1995-04-01), Maniar et al.
"Plasma Etching of RuO.sub.2 Thin Films," by Shinji Saito et al., Jpn. J. Appl. Phys., vol. 31, 1992, pp. 135-138.
"Decomposition and Product Formation in Tetrafluoromethane--Oxygen Plasma Etching Silicon in the Afterglow"; Beenakker et al., 1981; J. Appl. Phys., 52(1); abstract only.

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