Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-09-06
2005-09-06
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S433000
Reexamination Certificate
active
06939779
ABSTRACT:
On a substrate (1), a silicon oxide film (2) is formed. Thereon, a silicon nitride film (3) is formed. And, an opening for a trench is formed by patterning these films. Then, an oxide film including fluorine (8) is formed on the substrate (1). A fluorine diffusing layer (9) is formed by diffusing fluorine from the oxide film including fluorine (8) with its width wider than the opening for a trench. Then a trench (4) is formed, leaving fluorine diffusing layer portions (9a). After this, a thermal oxide film is formed on the inner wall of trench (4). Then the thermal oxide film includes fluorine near the corner of trench (4). This is diffused from the fluorine diffusing layer portions (9a). After all this, the trench (4) is filled with oxide film (6).
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Oki Electric Industry Co. Ltd.
Perkins Pamela E
Wenderoth , Lind & Ponack, L.L.P.
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