Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1989-04-21

1991-07-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 437 28, 437 29, 437 30, 437 41, 437233, 437191, 437186, 357 233, H01L 21336

Patent

active

050325353

ABSTRACT:
In the selective etching by RIE, a poly-Si film formed on the gate oxide film is not entirely removed such that the poly-Si film is partly left unremoved. Then, the entire surface is covered with a poly-Si film, followed by applying RIE. The particular technique permits preventing the gate oxide film near a poly-Si gate and the interface between the gate oxide film and the substrate from being damaged. Finally, a chemical dry etching, which does not do damage to the gate insulation film near the poly-Si gate, is applied to remove the poly-Si film.

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