Etching a substrate: processes – Forming or treating article containing a liquid crystal...
Patent
1992-12-17
1995-07-11
Dang, Thi
Etching a substrate: processes
Forming or treating article containing a liquid crystal...
437228, 216 41, 216 58, 216 76, C23F 100
Patent
active
054317738
ABSTRACT:
A method of manufacturing a semiconductor device, which comprises steps of providing a substrate, forming an oxide layer of a metal material, which includes a tantalum or an alloy mainly containing a tantalum on the substrate, placing the substrate into a first chamber, activating an etching gas which includes a fluorine containing gas and an oxygen containing gas, in a second chamber, introducing the activated etching gas into the second chamber, and etching the oxide layer by the introduced gas selectively against the substrate. A method of manufacturing a liquid crystal display device, which comprises steps of providing a substrate, forming an anodic oxide layer of a tantalum containing material on the substrate, forming an etching mask on the anodic oxide layer, placing the substrate into a first region, activating a mixture of fluorine and oxygen containing gas in a second region, apart from the first region, introducing the activated etching gas into the first region through a gas introducing portion, and etching the oxide layer on the substrate selectively against the substrate, by using the etching mask.
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Ikeda Mitsushi
Murooka Michio
Dang Thi
Kabushiki Kaisha Toshiba
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