Method of manufacturing semiconductor device

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437194, 437196, 437199, 437203, H01L 2144

Patent

active

054078636

ABSTRACT:
To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate, the film is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.

REFERENCES:
patent: 4495221 (1985-01-01), Broadbent
patent: 4566177 (1986-01-01), van de Van et al.
patent: 4796562 (1989-01-01), Brors et al.
patent: 4837183 (1989-06-01), Polito
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5106781 (1992-04-01), Penning De Vries
patent: 5108951 (1992-04-01), Chen et al.
Dipankar Praminik and Arjun N. Saxena, "Aluminum Metallization for ULSI," Mar. 1990, Solid State Technology, vol. 33, No. 3; pp. 73-79.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-66854

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.