Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-23

2011-08-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S669000, C438S703000, C257SE21020, C257SE21023

Reexamination Certificate

active

08003544

ABSTRACT:
A method of manufacturing a semiconductor device according to an embodiment includes processing a second film14formed on a semiconductor substrate to a pattern including a plurality of linear parts and end portions formed in an end of each of the linear parts, having a width wider than the linear parts, forming a first pattern16by slimming the pattern, forming a second pattern including a first opening180that traverses the end portion141aof the first pattern16, etching the second film14exposed in the first opening180, and dividing the end portion141ainto a first end portion142aclose to the linear part140aand a second end portion143aapart from the linear part140a.

REFERENCES:
patent: 7495294 (2009-02-01), Higashitani
patent: 7906435 (2011-03-01), Nishiyama
patent: 2007/0290232 (2007-12-01), Nishiyama
patent: 2008/0008969 (2008-01-01), Zhou et al.

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