Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-03-08

2011-03-08

Brewster, William M (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C438S106000, C438S108000, C438S612000, C438S613000, C257S778000, C257S786000, C257S737000, C257SE21511

Reexamination Certificate

active

07901997

ABSTRACT:
A solder14is formed, by a plating method, on a connecting surface21A and a side surface21B in a connecting pad21of a wiring board11which is opposed to a metal bump13formed on an electrode pad31of a semiconductor chip12, and subsequently, the solder14is molten to form an accumulated solder15taking a convex shape on the connecting surface21A of the connecting pad21and the metal bump13is then mounted on the connecting surface21A of the connecting pad21on which the accumulated solder is formed, and the accumulated solder15and the metal bump13are thus bonded to each other.

REFERENCES:
patent: 2003/0001286 (2003-01-01), Kajiwara et al.
patent: 2006/0065978 (2006-03-01), Nishiyama et al.
patent: 2006/0201997 (2006-09-01), Tung
patent: 2006/0279000 (2006-12-01), Chang et al.
patent: 2009/0302450 (2009-12-01), Ohde et al.
patent: 8-148496 (1996-06-01), None

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