Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-08-02
2011-08-02
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568, C438S478000
Reexamination Certificate
active
07989316
ABSTRACT:
To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
REFERENCES:
patent: 6380046 (2002-04-01), Yamazaki
patent: 6485993 (2002-11-01), Trezza et al.
patent: 7199024 (2007-04-01), Yamazaki
patent: 2002/0109144 (2002-08-01), Yamazaki
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2008/0061301 (2008-03-01), Yamazaki
patent: 2008/0067529 (2008-03-01), Yamazaki
patent: 2008/0067597 (2008-03-01), Yamazaki
patent: 2008/0083953 (2008-04-01), Yamazaki
patent: 2008/0318367 (2008-12-01), Shimomura et al.
patent: 2009/0004821 (2009-01-01), Shimomura et al.
patent: 2009/0004823 (2009-01-01), Shimomura et al.
patent: 2000-012864 (2000-01-01), None
Miyairi Hidekazu
Mizoi Tatsuya
Shimomura Akihisa
Tanaka Koichiro
Mulpuri Savitri
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2640778