Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1996-02-23

1998-08-11

Dang, Trung

Fishing, trapping, and vermin destroying

437 40, 437 41, 437228, 437204, 437180, H01L 21265

Patent

active

057926719

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate; forming a gate electrode on the substrate; forming impurity regions on both sides of the gate electrode; forming a first sidewall on the side of the gate electrode; forming a second sidewall on the side of the first sidewall; forming a third sidewall on the side of the second sidewall; and selectively removing only the second sidewall to thereby form a contact area. It is possible to precisely form a fine contact area so that the size of a semiconductor device can be reduced.

REFERENCES:
patent: 4736233 (1988-04-01), McDavid
patent: 4906591 (1990-03-01), Okumura
patent: 5063168 (1991-11-01), Vora
patent: 5290720 (1994-03-01), Chen
patent: 5312768 (1994-05-01), Gonzalez

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