Patent
1990-05-08
1991-11-26
James, Andrew J.
357 234, 357 39, 357 42, H01L 2974
Patent
active
050687042
ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of bringing a mirror-polished surface of a first semiconductor substrate of a first conductivity type into contact with a mirror-polished surface of a second semiconductor substrate of a second conductivity type having an impurity concentration which is lower than that of said first conductivity type, in a clean atmosphere, and thermally heating said first and second semiconductor substrates so that they unite. Impurity is diffused from said first semiconductor substrate into said second semiconductor substrate, thereby forming a diffusion layer of a first conductivity type in said second semiconductor substrate. A total amount of impurity of said diffusion layer is 1.times.10.sup.13 /cm.sup.2 to 2.times.10.sup.15 /cm.sup.2, to form a pn junction in said second semiconductor substrate.
REFERENCES:
patent: 3855611 (1974-12-01), Neilson et al.
patent: 4278476 (1981-07-01), Bartko et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4587713 (1986-05-01), Goodman et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4766482 (1988-08-01), Smeltzer et al.
patent: 4782379 (1988-11-01), Baliga
patent: 4914496 (1990-04-01), Nakagawa et al.
Hoshi Tadahide
Imamura Kaoru
Nakagawa Akio
Sato Ryo
Dang Hung Xuan
James Andrew J.
Kabushiki Kaisha Toshiba
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