Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1991-08-30

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437160, 437186, 437950, 148DIG144, H01L 2120

Patent

active

052273296

ABSTRACT:
A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200.degree. C. and lower than 400.degree. C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.

REFERENCES:
patent: 3664896 (1972-05-01), Duncan
patent: 4648175 (1987-03-01), Metz, Jr. et al.
patent: 4696702 (1987-09-01), Ellis, Jr. et al.
patent: 4751101 (1988-06-01), Joshi
patent: 4988632 (1991-01-01), Pfiester
Nakayama et al., "Boron Doping Effect on Silicon Film Deposition in the Si.sub.2 H.sub.6 --B.sub.2 H.sub.6 --He Gas System"; J. Electrochem. Soc: Solid-State Science and Technology, vol. 133, No. 8, pp. 1721-1724, Aug. 1986.
Sze, "VLSI Technology", 1988, pp. 499-507.

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