Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1991-02-05

1992-03-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 6, 437210, 437246, 437974, 437235, H01L 2146

Patent

active

051008092

ABSTRACT:
A silicon substrate (20) having a pnpn structure is soldered to a metal plate (10). A silicon oxide film (16) is naturally formed on the side surface of the silicon substrate during a process of removing defective part of the side surface, and a metal component penetrates into the silicon oxide film. The silicon substrate is dipped into an etchant to etch the silicon oxide film, so that a leak current through the metal component is effectively prevented.

REFERENCES:
patent: 3289267 (1966-12-01), Ullrich
patent: 3597269 (1971-08-01), Chang et al.
patent: 3852876 (1974-12-01), Sheldon et al.
patent: 3909321 (1975-09-01), Roberts
patent: 4638553 (1987-01-01), Nilarp

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