Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-03-31
1980-08-12
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, H01L 2122
Patent
active
042171539
ABSTRACT:
In the manufacture of a field-effect transistor, a silicon nitride film (underlaid with a thin silicon oxide film) is selectively formed on those parts of a semiconductor substrate of a first conductivity type at which a gate region and source and drain electrodes are to be formed, the formation of the source and drain regions and subsequently the formation of a selective thermal oxidation film on the source and drain regions are carried out by employing the silicon nitride film as a mask, and thereafter, the silicon nitride film is removed and the contacts are selectively formed at the exposed parts.
Further, this invention extends to the manufacture of a C-MOS integrated circuit device which exploits the SOP (Selective oxidation process) technique employing an oxidation-proof film.
According to this invention, there are provided a novel method of manufacture which reduces the problem of disconnection of electrode interconnections, which promotes the fineness of a pattern based on self-alignment and which reduces the capacitance between source and drain electrodes thereby to achieve a high-speed operation.
REFERENCES:
patent: 3436282 (1969-04-01), Shoda
patent: 3477886 (1969-11-01), Ehlenberger
patent: 3959025 (1976-05-01), Polinsky
patent: 4002501 (1977-01-01), Tamura
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4023195 (1977-05-01), Richman
patent: 4043848 (1977-08-01), Bazin
Fukunaga Shinobu
Yasuoka Akihiko
Mitsubishi Denki & Kabushiki Kaisha
Ozaki G.
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