Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 42, 438462, H01L 21784

Patent

active

059769041

ABSTRACT:
A method of manufacturing a semiconductor device for forming with high accuracy a marker used for separating a semiconductor device 10, wherein a plurality of semiconductor devices 10 are fabricated in a semiconductor substrate 16 are separated, and wherein etched grooves 31 are formed outside the semiconductor regions in the semiconductor substrate 16.

REFERENCES:
patent: 5436196 (1995-07-01), Miyashita
patent: 5567659 (1996-10-01), Pakulski et al.
patent: 5573976 (1996-11-01), Kato et al.
patent: 5593815 (1997-01-01), Ahn
patent: 5601687 (1997-02-01), Herrick
patent: 5629233 (1997-05-01), Chand et al.
patent: 5780320 (1998-07-01), Knoshita

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2134049

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.