Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-09-30

1996-03-12

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437192, 437203, 437194, 437177, 148DIG100, H01L 2144, H01L 2128

Patent

active

054985722

ABSTRACT:
A method for manufacturing a semiconductor device including forming an electrode on a part of a semiconductor substrate, depositing an insulating film on the semiconductor substrate and on the electrode, and forming a contact hole penetrating through the insulating film to expose a part of the electrode; forming a barrier metal layer on the electrode in the contact hole, on the internal side surface of the contact hole, and on the surface of the insulating film; and depositing a metal layer on the barrier metal layer and patterning the metal layer and the barrier metal layer to form a wiring layer wherein the barrier metal layer comprises a metal that does not form an intermetallic material by solid state diffusion with either of the electrode and the metal layer even at elevated temperatures.

REFERENCES:
patent: 4845543 (1989-07-01), Okikawa et al.
patent: 4857141 (1989-08-01), Abe et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5041393 (1991-08-01), Ahrens et al.
patent: 5108950 (1992-04-01), Wakabayashi et al.

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