Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-05-05

2000-11-14

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

438710, 438723, 438725, 438906, H01L 21302

Patent

active

061470031

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: a) forming a wiring layer on a semiconductor substrate, the wiring layer being an Al or Al alloy layer, or a laminated wiring layer including an Al or Al alloy layer and a Ti or Ti alloy layer formed thereon; b) coating a resist layer on the wringing layer and patterning the resist layer to form a wiring resist pattern; c) patterning the wiring layer to form a wiring pattern 3 by using the wiring resist pattern as a mask; d) forming an interlayer insulating film 5 on the semiconductor substrate to cover the wiring pattern; e) coating a resist layer on the interlayer insulating film and patterning the resist layer to form a connection hole resist pattern 6; f) dry-etching the interlayer insulating film with an etching gas containing fluorine to form a connection hole reaching the wiring pattern 3, by using the connection hole resist pattern as a mask; g) after the step f), rinsing the semiconductor substrate in a liquid 10 made of a material selected from a group consisting of water, alcohol, pyridine, and combinations thereof; and h) after the step g), ashing the connection hole resist pattern 6.

REFERENCES:
patent: 5399527 (1995-03-01), Tabara
patent: 5451291 (1995-09-01), Park et al.
patent: 5554254 (1996-09-01), Huang et al.
patent: 5670019 (1997-09-01), Huang
patent: 5872053 (1999-02-01), Smith

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