Method of manufacturing semiconductor components

Metal working – Method of mechanical manufacture – Assembling or joining

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Details

29580, 29583, 29589, B01J 1700

Patent

active

041976312

ABSTRACT:
A method of fabricating semiconductor components having electrodes and terminals. The method includes preparing an undivided semiconductor wafer having at least one pn-junction; etching a grid pattern of grooves into at least one side of the undivided wafer, thereby forming mesas with concave side surfaces and elevations with upper surfaces bounded by closed rounded curves; coating the exposed lateral surfaces of the etched mesas with a passivating layer; metallizing the upper surfaces of these elevations, thereby providing ohmic contacts for the undivided semiconductor wafer; and breaking the undivided semiconductor wafer into individual semiconductor chips along the lines of the etched grooves.

REFERENCES:
patent: 2959502 (1960-11-01), Gaertner
patent: 3159780 (1964-12-01), Parks
patent: 3389457 (1968-06-01), Goldman
patent: 3669773 (1972-06-01), Levi
patent: 3795045 (1974-03-01), Dumas
patent: 3852876 (1974-12-01), Sheldon

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