Method of manufacturing semiconductor capacitive element

Details Method of manufacturing semiconductor capacitive element Method of manufacturing semiconductor capacitive element

1989-08-07

1990-06-05

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 51, 427 79, H01G 410, H01G 700, B01J 1700, H01L 2702

Patent

active

049318977

ABSTRACT:
A method of manufacturing a semiconductor capacitor provided with a substrate, a dielectric film formed on the substrate and a pair of electrode layers stacked on both sides of the dielectric film comprises a step of forming a polycrystalline silicon layer for serving as one of the electrode layers on the substrate, a step of making at least a surface region of the polycrystalline silicon layer amorphous, a step of forming the dielectric film on the polycrystalline silicon layer while maintaining an amorphous surface state, and a step of forming another one of the electrode layers on the dielectric film. The lower electrode of the capacitor has its surface or the whole layer made amorphous. The surface of the electrode which is amorphous has smooth surface configuration, thereby improving the quality of the dielectric film formed thereon.

REFERENCES:
patent: 3864817 (1975-02-01), Lapham et al.
patent: 4464701 (1984-08-01), Roberts et al.
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4628405 (1986-12-01), Lippert
patent: 4823181 (1989-04-01), Mohsen et al.
Y. Ohji et al., "Reliability of Nano-Meter Thick Multi-Layer Dielectric Films on Poly-Crystalline Silicon" 25th Annual Proceeding of Reliability Physics, pp. 55-59, 1987.

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