Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1998-02-19
2000-01-04
Fourson, George
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438406, 438459, 438481, H01L 2130
Patent
active
060109505
ABSTRACT:
The most distinctive feature of the present invention lies in that a warp and crystal defects can be prevented from occurring and a processing margin for forming an isolation groove can be improved in an intelligent power device including a power element section and an IC control section within one chip. A bonded wafer is obtained by bonding an active-layer substrate and a supporting substrate with an epitaxially grown silicon layer interposed therebetween so as to cover an oxide film selectively formed at the interface of the active-layer substrate. Isolation trenches are then formed in the bonded wafer to such a depth as to reach the oxide film from the element forming surface of the active-layer substrate. Thus, an IC controller is formed within a dielectric isolation region surrounded with the isolation trenches and the oxide film and accordingly the IC controller can effectively be isolated by a dielectric.
REFERENCES:
patent: 5273616 (1993-12-01), Bozler et al.
patent: 5443661 (1995-08-01), Oguro et al.
patent: 5906626 (1999-06-01), Kobayashi
Easter, W.G., et al., "Polysilicon t oSilicon Bonding in Laminated Dielectrically Isolated (LDI) Wafers", Extended Abstracts of the Electrochemical Society, vol. 91-2, pp. 707-710, Oct. 1991.
Baba Yoshiro
Okumura Hideki
Osawa Akihiko
Fourson George
Kabushiki Kaisha Toshiba
LandOfFree
Method of manufacturing semiconductor bonded substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor bonded substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor bonded substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1072317