Method of manufacturing semiconductor bonded substrate

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

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438406, 438459, 438481, H01L 2130

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active

060109505

ABSTRACT:
The most distinctive feature of the present invention lies in that a warp and crystal defects can be prevented from occurring and a processing margin for forming an isolation groove can be improved in an intelligent power device including a power element section and an IC control section within one chip. A bonded wafer is obtained by bonding an active-layer substrate and a supporting substrate with an epitaxially grown silicon layer interposed therebetween so as to cover an oxide film selectively formed at the interface of the active-layer substrate. Isolation trenches are then formed in the bonded wafer to such a depth as to reach the oxide film from the element forming surface of the active-layer substrate. Thus, an IC controller is formed within a dielectric isolation region surrounded with the isolation trenches and the oxide film and accordingly the IC controller can effectively be isolated by a dielectric.

REFERENCES:
patent: 5273616 (1993-12-01), Bozler et al.
patent: 5443661 (1995-08-01), Oguro et al.
patent: 5906626 (1999-06-01), Kobayashi
Easter, W.G., et al., "Polysilicon t oSilicon Bonding in Laminated Dielectrically Isolated (LDI) Wafers", Extended Abstracts of the Electrochemical Society, vol. 91-2, pp. 707-710, Oct. 1991.

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