Method of manufacturing semiconductor bodies composed of amorpho

Details Method of manufacturing semiconductor bodies composed of amorpho Method of manufacturing semiconductor bodies composed of amorpho

1980-01-30

1981-09-29

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, C23C 1100

Patent

active

042923433

ABSTRACT:
Semiconductor bodies comprised of amorphous silicon are produced by sequentially depositing a plurality of amorphous silicon layers on a heat-resistant substrate by glow discharge in a silicon halide atmosphere at low pressures and low substrate temperatures, with each layer being hydrogenated with atomic hydrogen before deposition of the next subsequent layer. The semiconductor bodies thus produced are useful as basic or raw materials for fabricating solar cells.

REFERENCES:
patent: 3485666 (1969-12-01), Sterling et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4196438 (1980-04-01), Carlson
patent: 4202928 (1980-05-01), Staebler

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor bodies composed of amorpho does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor bodies composed of amorpho, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor bodies composed of amorpho will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1234074