Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Patent
1997-11-14
2000-08-08
Niebling, John F.
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
438458, 438928, 438960, 438977, 438406, 438409, H01L 2130, H01L 2146
Patent
active
061001651
ABSTRACT:
A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
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Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Niebling John F.
Zarneke David A.
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