Method of manufacturing semi-conductor devices

Details Method of manufacturing semi-conductor devices Method of manufacturing semi-conductor devices

1974-12-30

1976-05-04

DiPalma, Victor A.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 83 7, 156 6, 156 17, B01J 1700, H01L 766

Patent

active

039539199

ABSTRACT:
To manufacture semi-conductor devices an etchant resistant material is applied to the major surfaces of a semi-conductor wafer having at least one n-type zone and at least one p-type zone. The wafer is then divided into individual devices by sawing or scribing part of the way through the wafer and then cracking the wafer along the grooves defined by the sawing or scribing operation, p-n junctions being exposed at the divided edges of the devices. The devices are then mounted on an etchant resistant, adhesive tape with one major surface of each device being presented to the tape, and the tape, with the devices carried thereby, is immersed in an etchant so that the divided edges of the devices are etched.

REFERENCES:
patent: 3496617 (1970-02-01), Cook et al.
patent: 3497948 (1970-03-01), Wiesler et al.
patent: 3596348 (1971-08-01), Stacey et al.
patent: 3677875 (1972-07-01), Althouse

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