Method of manufacturing semi conductor device mounted on a heat

Details Method of manufacturing semi conductor device mounted on a heat Method of manufacturing semi conductor device mounted on a heat

1993-05-24

1994-07-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437212, 437902, H01L 2160

Patent

active

053326954

ABSTRACT:
A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element incudes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

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Davey et al.,"Heat Sinks for GaAs Integrated Circuits by Heterostructures", Navy Technical Disclosure Bulletin, vol. 7, No. 3, Mar. 1982, pp. 25-29.
Comerford, "Flip-chip Bonding by Solder Filling of Capillaries", IBM Technical Bulletin, vol. 23, No. 5, Oct. 1980, pp. 2146-2147.

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