Method of manufacturing self-aligned semiconductor devices

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148 15, 156653, 357 23, H01L 23306, H01L 21265

Patent

active

041314972

ABSTRACT:
A method of forming extremely small impurity regions within other impurity regions without the need for providing critical masks. In the preferred embodiment this is achieved by forming an undercut band within masking layers atop a substrate to define a first impurity region, such as the base region of a bipolar transistor. After this region is formed by the introduction of impurities, the undercut is filled-in by a chemical vapor deposition process. A blocking mask may then be used for the formation of the second impurity region, in this case the emitter, within the first region. The window of the second region is defined by the filled-in band, thereby insuring a selected distance between the peripheries of said first and second impurity regions. The same mask may also be used to form other self-aligned regions with the first region.

REFERENCES:
patent: 3783047 (1974-01-01), Paffen et al.
patent: 3900352 (1975-08-01), Potter
patent: 3928082 (1975-12-01), Schwettmann et al.
patent: 3948694 (1976-04-01), Mills
patent: 3961999 (1976-06-01), Antipov
patent: 3967981 (1976-07-01), Yamazaki
patent: 4028150 (1977-06-01), Collins et al.
patent: 4040891 (1977-08-01), Chang et al.
patent: 4052229 (1977-10-01), Pashley
patent: 4053349 (1977-10-01), Simko
patent: 4060427 (1977-11-01), Barile et al.
patent: 4061530 (1977-12-01), Hosack
Antipov, "Filling Air Pockets . . . Si.sub.3 N.sub.4 ", IBM -TDB, 18 (1975) 732.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing self-aligned semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing self-aligned semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing self-aligned semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1127215

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.