Method of manufacturing schottky gate field transistor by ion im

Details Method of manufacturing schottky gate field transistor by ion im Method of manufacturing schottky gate field transistor by ion im

1987-12-11

1989-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 44, H01L 21265

Patent

active

048898171

ABSTRACT:
A method of manufacturing a schottky gate field effect transistor with use of a technique of ion implantation comprises the steps of: (a) selectively implantation an ion into a schottky gate field effect transistor formed in a compound semiconductor substrate and (b) annealing the resultant semiconductor substrate at temperature of from 300.degree. C. to 450.degree. C., whereby threshold voltage and a drain current of the schottky gate field effect transistor can be made prescribed values without deteriorating another characteristics of the transistor.

REFERENCES:
patent: 4559238 (1985-12-01), Bujatti et al.
patent: 4602965 (1986-07-01), McNally
patent: 4701422 (1987-10-01), Elliott
patent: 4717685 (1988-01-01), Nakajima

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