Method of manufacturing Schottky field-effect transistors utiliz

Details Method of manufacturing Schottky field-effect transistors utiliz Method of manufacturing Schottky field-effect transistors utiliz

1980-11-12

1983-03-29

Andrews, M. J.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29579, 29580, 156649, 156653, 1566591, 357152, 357 22, 357 56, 357 65, 427 84, 427 88, H01L 21302, H01L 21441

Patent

active

043778992

ABSTRACT:
A method for manufacturing a semiconductor transistor device, specifically a Schottky barrier gate field-effect transistor, having an excellent performance at high frequency due to an exceedingly short gate length. An electrically conductive active layer is formed on a semi-insulating semiconductor substrate. Two adjacent walls are formed on the adjacent layer, are made of resist material, and extended linearly parallel to one another. Ohmic electrode metal is then evaporated obliquely with respect to the vertical surfaces of the two walls to form an ohmic electrode layer on the active layer in areas except for that lying between the two walls. A layer of Schottky barrier metal is then deposited between the two walls, and then the two walls are removed to remove the layers of ohmic electrode metal and Schottky barrier metal on the two walls.

REFERENCES:
patent: 3387360 (1968-06-01), Nakamura et al.
patent: 3676732 (1972-07-01), Gabor
patent: 3851379 (1974-12-01), Gutknecht et al.
patent: 3912546 (1975-10-01), Hunsperger et al.
patent: 3994758 (1976-11-01), Ogawa et al.
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4222164 (1980-09-01), Triebwasser
patent: 4232439 (1980-11-01), Shibata
patent: 4265934 (1981-05-01), Ladd

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