Method of manufacturing Schottky diode device

Details Method of manufacturing Schottky diode device Method of manufacturing Schottky diode device

2007-10-16

2007-10-16

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

C257SE21359, C257SE21368

Reexamination Certificate

active

11208374

ABSTRACT:
Embodiments of the invention provide a method of manufacturing a Schottky diode device. In one embodiment, the method includes: (a) providing a substrate; (b) sequentially forming a gate oxide layer and a polysilicon layer on the substrate; (c) partially oxidizing the polysilicon layer to form a poly oxide layer on the polysilicon layer; (d) forming and defining a photoresist layer on the poly oxide layer for exposing parts of the poly oxide layer; (e) etching the poly oxide layer, the polysilicon layer and the gate oxide layer via the photoresist layer for forming a poly oxide structure, a polysilicon structure and a gate oxide structure; and (f) removing the photoresist layer. The present invention introduces a poly oxide layer instead of the CVD oxide for preventing the photoresist lifting issue.

REFERENCES:
patent: 7030020 (2006-04-01), Hsieh
patent: 08236608 (1996-09-01), None

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