Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-08-24
1979-12-25
Pitlick, Harris A.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 357 17, H01L 3300
Patent
active
041804236
ABSTRACT:
A red light-emitting gallium phosphide device of high electroluminescent efficiency which comprises an n-type gallium phosphide substrate containing a donor at concentrations ranging from 1.times.10.sup.17 cm.sup.-3 to 3.times.10.sup.17 cm.sup.-3, an n-type gallium phosphide layer formed on said substrate with a donor concentration in the neighborhood of a p-n junction set at a level ranging from 2.times.10.sup.17 cm.sup.-3 to 5.5.times.10.sup.17 cm.sup.-3 and a p-type gallium phosphide layer grown on said n-type gallium phosphide layer with a net acceptor concentration and an oxygen donor concentration in the neighborhood of the p-n junction chosen to range from 1.times.10.sup.17 cm.sup.-3 to 3.times.10.sup.17 cm.sup.-3 and 0.1.times.10.sup.16 cm.sup.-3 to 8.times.10.sup.16 cm.sup.-3, respectively.
REFERENCES:
patent: 3549401 (1970-12-01), Buszko
patent: 3603833 (1971-09-01), Logan
patent: 3703671 (1972-11-01), Saul
patent: 3715245 (1973-02-01), Barnett
patent: 3934260 (1976-01-01), Kasami et al.
patent: 3951699 (1976-04-01), Nuito et al.
patent: 3951700 (1976-04-01), Bepph et al.
patent: 4017880 (1977-04-01), Kasami et al.
Saul, J. Electrochemical Soc. (7-1970), Distribution . . . Liquid Phase Epitaxy Layers, pp. 921-924 (vol. 117, No. 7).
Saul, Applied Physics Letters, vol. 15, No. 7, (10-1969) pp. 229-231, GaP . . . Efficiency of 7%.
Mizuta, Japan J. Appl. Physics, New Junction . . . GaP . . . Diodes pp. 1631-1632 (vol. 14, No. 10) Oct. 1975.
Kukimuto et al., Physical Review, Photocapacitance . . . Concentration, vol. 7, No. 6 (3-1973) pp. 2486-2499.
Hackett et al., "Scanning Electron Microscope Characterization of GaP Red-Emitting Diodes" J. Applied Physics, vol. 43, No. 6, Jun. 1972.
Ralston, "Detailed Light-Current-Voltage Analysis of GaP Electroluminescent Diodes", J. Applied Physics, vol. 44, No. 6, Jun. 1973.
Takanashi et al., "GaP Liquid Phase Epitaxial Growth and Light Emitting Diodes III-GaP Red Light Emitting Diodes", Fujitsu Scientific & Tech. Journal, Sep. 1973.
Kasami Akinobu
Naito Makoto
Pitlick Harris A.
Tokyo Shibaura Electric Co. Ltd.
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