Method of manufacturing radiation resistant semiconductor device

Details Method of manufacturing radiation resistant semiconductor device Method of manufacturing radiation resistant semiconductor device

1992-11-12

1994-02-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 37, 437938, H01L 21225

Patent

active

052847934

ABSTRACT:
According to this invention, an oxide film is formed on a semiconductor substrate, a metallic boron film or a film containing at least one selected from the group consisting of boron, phosphorus, and arsenic is deposited on the surface of the resultant structure. At least one selected from the group consisting of boron, phosphorus, and arsenic is doped from the metallic boron film or the film containing at least one selected from the group consisting of boron, phosphorus, and arsenic to the oxide film by diffusion without diffusing into the semiconductor substrate. Thus, a semiconductor device having good radiation resistance can be obtained.

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S. K. Ghandhi, VLSI Fabrication Principles, pp. 427-429, 1983.
Wolf et al., Silicon Processing For the VLSI Era, pp. 191-193, 1986.

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