Method of manufacturing radiation-emitting semiconductor devices

Details Method of manufacturing radiation-emitting semiconductor devices Method of manufacturing radiation-emitting semiconductor devices

1993-12-17

1994-10-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

257 13, 257 94, 372 43, H01L 2120

Patent

active

053588975

ABSTRACT:
Radiation-emitting semiconductor diodes in the form of diode lasers or LEDs are used inter alia in information processing systems. There is a particular demand for diodes having a low wavelength. A diode laser which emits at 633 nm is a particularly attractive alternative to a helium-neon gas laser. According to the invention, a method of making a the buffer layer of such a radiation-emitting semiconductor diode comprises aluminium-gallium arsenide, the aluminium content having at least a minimum value belonging to the band gap of the active layer. The minimum Al content is approximately 6 at % for an InGaP band gap of 1.88 eV, and approximately 9 at % for 1.92 eV. As a result, an active layer comprising InGaP emits, for example, at 650 nm while the semiconductor layers still possess a good crystal quality and morphology. When the active layer of a diode laser has a multiple quantum well structure with comparatively thick (approximately 5 nm) well layers, it even emits at 633 nm. In this method according to the invention, a comparatively high growing temperature--preferably approximately 760.degree. C.--and a buffer layer comprising AlGaAs with a suitable aluminium content are used. Ordering of the structure in semiconductor layers comprising InGaP and InAlGaP is counteracted by this.

REFERENCES:
patent: 4585491 (1986-04-01), Burnham et al.
patent: 5003549 (1991-03-01), Mitsui et al.
patent: 5036521 (1991-07-01), Hatakoshi et al.
patent: 5060236 (1991-10-01), Yagi et al.

Affiliated with

Also associated with

Rating

Method of manufacturing radiation-emitting semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing radiation-emitting semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing radiation-emitting semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-135116