Method of manufacturing power MOSFET

Details Method of manufacturing power MOSFET Method of manufacturing power MOSFET

1987-12-22

1988-10-11

Ozaki, George T.

Fishing, trapping, and vermin destroying

357 58, 437913, H01L 21383

Patent

active

047771496

ABSTRACT:
In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.

REFERENCES:
patent: 3440113 (1969-04-01), Wolley
patent: 3640783 (1972-02-01), Bailey
patent: 3947864 (1976-03-01), Yatsuo
patent: 4398339 (1983-08-01), Blanchard et al.
Clemente et al., "A Chopper for Motor Speed Control Using Parallel Connected Power Hexfets", Int. Rectifier Hexfet Databook, 1981, pp. 72-83.
Nasshibian et al., IEEE Trans. on Electron Devices, vol. ED-27, No. 9, Sep. 1980, pp. 1757-1761.
Nassibian et al., IEEE Trans. on Electron Devices, vol. ED-28, Sep. 1981, pp. 1014-1017.

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