Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2007-08-21
2007-08-21
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S089000, C117S094000, C117S095000, C117S104000, C117S105000
Reexamination Certificate
active
10916208
ABSTRACT:
A method of manufacturing KNbO3single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xEis supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1−xOy, and xEis a mole composition ratio at the eutectic point for KNbO3and 3K2O.Nb2O5under a predetermined oxygen partial pressure. Maintaining the temperature Tsof the substrate in the range TE≦Ts≦Tmwhere TErepresents the temperature at the eutectic point and Tmrepresents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1−xOydeposited on the substrate.
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Higuchi Takamitsu
Iwashita Setsuya
Miyazawa Hiromu
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