Method of manufacturing polysilicon film including recrystalliza

Details Method of manufacturing polysilicon film including recrystalliza Method of manufacturing polysilicon film including recrystalliza

1992-06-19

1995-01-31

Fourson, George

Fishing, trapping, and vermin destroying

437233, 437919, 437977, H01L 21285, H01L 21324

Patent

active

053858638

ABSTRACT:
A method of fabricating a polysilicon film whose crystal grain size can be controlled in a wide range and which has a large surface area and an application thereof to a DRAM are disclosed. In polycrystallizing an amorphous silicon film having a substantially clean surface, nucleation and crystal growth are performed under different conditions. With this method, crystal grain density and crystal grain size can be controlled easily, causing a polysilicon film having finer grains to be formed concomitant with reduction of capacitor area due to increase of integration density of DRAM.

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patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara

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