Method of manufacturing polycrystalline silicon film

Fishing – trapping – and vermin destroying

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148DIG122, 437233, 437963, H01L 2120

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050647792

ABSTRACT:
In a method of manufacturing a poly-Si film, silicon is deposited on a substrate by means of a thermal decomposition of a feed gas and plasma generation. The method comprises the step of arranging said substrate within a reaction apparatus, the step of introducing into said reaction apparatus a feed gas containing a silane-series gas for thermal decomposition of the feed gas at 500.degree. to 800.degree. C., and the step of generating plasma within the feed gas by applying power for generating the plasma simultaneously with the thermal decomposition, said power for plasma generation being controlled at a level lower than the power applied for forming a poly-Si film oriented in the <110> direction, so as to form a poly-Si film substantially oriented in the <100> direction and having a smooth surface.

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