Method of manufacturing pn junction in group II-VI compound semi

Details Method of manufacturing pn junction in group II-VI compound semi Method of manufacturing pn junction in group II-VI compound semi

1981-06-05

1983-06-21

Ozaki, G.

Metal treatment

Compositions

Heat treating

148189, 148177, 148188, 29569L, H01L 21324

Patent

active

043892566

ABSTRACT:
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming therein a gold alloy in an inert gas atmosphere. This impurity has such a high diffusion velocity as can suppress the vaporization, from ZnSe crystal, of Se atoms having a vaporization speed lower than the diffusion speed of gold, and thus desired pn junction can be formed.

REFERENCES:
patent: 3326730 (1967-06-01), Mandel et al.
patent: 3549434 (1970-12-01), Aven
patent: 3615877 (1971-10-01), Yamashita
patent: 3858306 (1975-01-01), Kloek et al.

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