Fishing – trapping – and vermin destroying
Patent
1991-11-29
1993-06-01
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437127, 437228, H01L 21265, H01L 2120
Patent
active
052159299
ABSTRACT:
This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting of a plurality of stacked pairs of ZnSe semiconductor layer and acceptor-impurity-doped ZnS.sub.0.12 Se.sub.0.88 mixed crystal semiconductor layer formed on a part of a buffer layer of ZnS.sub.0.06 Se.sub.0.94 etc. which is formed on a crystalline substrate of GaAs etc., the n-type semiconductor region being formed on the part of the buffer layer, where the superlattice is not formed, and the side wall of the superlattice region contiguous to the n-type region to form pn-junction being made clean by etching, so that a pn-junction of n-type semiconductor and p-type semiconductor having high carrier-density resulted.
REFERENCES:
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4648938 (1987-03-01), Ashlay et al.
patent: 4741801 (1988-05-01), Coleman
patent: 4866489 (1989-09-01), Yokogawa et al.
patent: 4963507 (1990-10-01), Amann et al.
patent: 5045894 (1991-09-01), Migita et al.
Mitsuyu Tsuneo
Okawa Kazuhiro
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Trinh Loc Q.
LandOfFree
Method of manufacturing pn-junction device II-VI compound semico does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing pn-junction device II-VI compound semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing pn-junction device II-VI compound semico will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1814076