Wave transmission lines and networks – Coupling networks – Electromechanical filter
Reexamination Certificate
2007-05-01
2007-05-01
Summons, Barbara (Department: 2817)
Wave transmission lines and networks
Coupling networks
Electromechanical filter
C310S324000
Reexamination Certificate
active
10538137
ABSTRACT:
Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.
REFERENCES:
patent: 4642508 (1987-02-01), Suzuki et al.
patent: 6842088 (2005-01-01), Yamada et al.
patent: 2002/0190814 (2002-12-01), Yamada et al.
patent: 5-8153412 (1983-09-01), None
patent: 6-0142607 (1985-07-01), None
patent: 8-330533 (1996-12-01), None
patent: 2000-069594 (2000-03-01), None
patent: 2002-372974 (2002-12-01), None
patent: 2003-032060 (2003-01-01), None
patent: 2003-136499 (2003-05-01), None
patent: WO 98/16956 (1998-04-01), None
patent: WO 02/093549 (2002-11-01), None
Kunisawa Tetsuro
Nagao Keigo
Yamada Tetsuo
Frommer & Lawrence & Haug LLP
Santucci Ronald R.
Summons Barbara
UBE Industries Ltd.
LandOfFree
Method of manufacturing piezoelectric thin film device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing piezoelectric thin film device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing piezoelectric thin film device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3821780