Metal working – Piezoelectric device making
Reexamination Certificate
2006-07-05
2009-11-10
Banks, Derris H (Department: 3729)
Metal working
Piezoelectric device making
C029S890100, C029S830000, C029S831000, C029S832000, C029S842000, C347S068000
Reexamination Certificate
active
07614128
ABSTRACT:
While a piezoelectric element is being formed by sequentially laminating a lower electrode whose uppermost layer is made of iridium, a titanium layer, a piezoelectric layer and an upper electrode to each other on a substrate, the piezoelectric layer is formed, by an MOD method, on the titanium layer with an contact angle of water to the surface thereof which is no less than 40°.
REFERENCES:
patent: 5563640 (1996-10-01), Suzuki
patent: 5933167 (1999-08-01), Shimada et al.
patent: 6183923 (2001-02-01), Kato et al.
patent: 6398349 (2002-06-01), Murai
patent: 6419849 (2002-07-01), Qiu et al.
patent: 6494567 (2002-12-01), Murai
patent: 6599757 (2003-07-01), Murai
patent: 11-191646 (1999-07-01), None
Banks Derris H
Nguyen Tai
Seiko Epson Corporation
Sughrue & Mion, PLLC
LandOfFree
Method of manufacturing piezoelectric element and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing piezoelectric element and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing piezoelectric element and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4058147