Method of manufacturing piezoelectric device

Details Method of manufacturing piezoelectric device Method of manufacturing piezoelectric device

2007-04-10

2007-04-10

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S846000, C310S31300R, C347S068000, C347S070000, C347S071000, C347S072000

Reexamination Certificate

active

10944852

ABSTRACT:
Exemplary embodiments of the present invention provide a method of manufacturing a piezoelectric device that includes a piezoelectric layer having high crystallinity in which crystal orientation is aligned to a desired direction, a method of manufacturing a ferroelectric device that includes a ferroelectric layer having the similar high crystallinity, and so forth. Exemplary embodiments include an insulating layer composed of SiO2 and so forth and a buffer layer composed of strontium oxide (SrO) and so forth are formed on a substrate such as a silicon single crystal wafer in sequence, and then a lower electrode composed of strontium ruthenate (SRO) is formed on the buffer layer. By forming self-assembled monolayers on the lower electrode, high affinity regions A1and low affinity regions A2are formed. Then, piezoelectric layers are selectively formed only on the high affinity regions A1.

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patent: 2003-152233 (2003-05-01), None
patent: WO 00/75992 (2000-12-01), None

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